Patent Attorney Aleksey Fadeev

Aleksey Fadeev

Patent Attorney

Our Team

  • Aleksey Fadeev

    Patent Attorney

  • Areas of work
    • Inventions
    • Utility models
  • Technology
    • Applied Physics
    • Crystal growth
    • Electronics
    • Mechanics
    • Micro & Nanotechnology
    • Semiconductors
  • Foreign languages
    • English
    • German

office@ars-patent.co.uk

Education

Mr. Alexey Fadeev graduated from the Faculty of Electronics of the St. Petersburg Electrotechnical University “LETI” in 2010 with an M.Sc. degree in Electronics. In 2011 Mr. Fadeev graduated from the Faculty of Economics and Management of LETI University and got a degree in Crisis Management. Then in 2013, Mr. Fadeev graduated from a post-graduate course at the LETI University with a Ph.D. degree.

While being a student Mr. Fadeev got a Russian President’s Fellowship and a Russian Government’s Fellowship. In 2009, Mr. Fadeev won a 3-month Research Fellowship of RWTH Aachen University (Germany).

Work Experience

Before starting his career in the field of Intellectual Property, Mr. Fadeev gained 10 years’ practical experience in the research and development of silicon carbide single crystal growth, which material is a high-power semiconductor. Mr. Fadeev is an author of more than a dozen of scientific publications in scientific periodicals and author of six patented inventions.

In 2016, Alexey joined ARS-PATENT as a patent expert. In 2020, he was certified as a Russian patent attorney with a specialization in inventions and utility models.

In his IP practice, Alexey consults on filing and prosecuting patent applications, drafts applications for inventions and utility models, and supervises our translators’ team. He has an extensive experience in various fields of technology including chemical arts, material science, electrical engineering and mechanical engineering.

How can we help you?

Talk to us to discuss how ARS-Patent can help you with your Intellectual Property requirements please click on the enquiry form link below.

 

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